Bulk Crystal Growth of Electronic, Optical and by Peter Capper

By Peter Capper

A few crystals were on hand for over 50 years, whereas others are newly appropriate to such industries as clinical imaging, infrared imaging, telecommunications and data know-how, generating gains within the thousands if now not the billions of bucks. subject matters of the 17 papers in this extremely important self-discipline comprise silicon, the expansion of gallium arsenide, desktop modeling, indium phosphide, InSb and similar ternary alloys, GaN substrates grown stressed, CMT, sapphires, fluorides, quartz, diamond, silicon carbide and development lower than minigravity stipulations.

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Ono, S. Kimura and T. Hibiya, (1995) /. Cryst. Growth 151, 285. 27. M. Tanaka, M. Hasebe and N. Saito, (1997) /. Cryst. Growth 180, 487. SILICON 41 28. Y. Kishida and K. Okazawa, (1999) J. Cryst. Growth 198/199, 135. 29. A. A. Brown, (1999) /. Cryst. Growth 205, 71. 30. Yu. V. I. N. G. G. M. Smirnovc, E. Dornberger, J. Virbulis, E. Tomzig and W. von Ammon, (2001) J. Cryst. Growth 230, 22. 31. Yu. V. I. N. G. G. B. M. Smirnov, E. Dornberger, J. Virbulis, E. Tomzig and W. von Ammon, (2002) J. Cryst.

Hoshikawa, (2000) Jpn. J. Appl. Phys. 39, LI 115. 17. A. RudeviCs, A. Muiznieks, G. Ratnieks, A. Muhlbauer and Th. Wetzel, (2004) J, Cryst. Growth 266, 54. 18. G. Ratnieks, A. Muiznieks, L. Buligins, G. Raming, A. Muhlbauer, A. Liidge and H. Riemann, (2000) J. Cryst. Growth 216, 204. 19. S. Enger, O. Grabner, G. Miiller, M. Breuera and F. Durst, (2001) J. Cryst. Growth 230, 135. 20. -W. B. Booker, M. Eguchi, T. Shyo and K. Kakimoto, (1995) J. Cryst. Growth 156, 383. 21. T. Kanda, M. Hourai, S. Miki, T.

Yamagishi and his coworkers observed FPD (flow-pattern defects) by the Secco etch technique [62]. Since oxide precipitate defects deteriorate the gate-oxide integrity of the MOS structure, the defects were named GOI (gate-oxide integrity) defects [63]. The defects were also detected using light-scattering tomography, thus the defects were named LST (laser-scattering tomography) defects [64]. 39 Octahedaral void defect observed by transmission electron microscope (Reprinted from Kato et al. Jpn.

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