Characterization, Design, and Processing of Nanosize Powders by Kevin Ewsuk, Yury Gogotsi

By Kevin Ewsuk, Yury Gogotsi

Offers an equipped and punctiliously chosen selection of present examine papers from contemporary symposia, together with The Characterization and Processing of Nanosize Powders and debris and Nanoscale and Multifunctional fabrics symposia either held on the sixth Pacific Rim convention on Ceramic and Glass expertise in Fall 2005. the themes coated comprise concepts to symbolize nanosize powders and nanoparticle dispersions, eco-friendly processing of nanopowders, and the sintering and microstructure of nanoparticle assemblies.Content:

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Additional info for Characterization, Design, and Processing of Nanosize Powders and Nanostructured Materials: Ceramic Transactions Series, Volume 190

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The creep deformation of both, monolithic and composite ceramics can be characterized by a primary creep range and a pronounced steady-state creep range. Ternary creep regime was not observed in the studied materials at the applied test conditions. The composite ceramics exhibits only minimum creep deformation up to 1300 °C. Significant creep deformation was detected only at the temperatures from 1350 °C to 1450°C. In spite of the lower grain diameter of SijN4 grains in the nanocomposite, the creep resistance of the nanocomposite was found to be significantly higher when compared to the creep resistance of the monolithic SijN4.

Soc, 81, 1109-1120 (1998) 6 H. Klemm, M. Herrmann, and Ch. Schubert, "High-Temperature Properties of SiîN^SiC Nanocomposites," Ceram. Eng. Sei. Proc, 21, 3-713-720 (2000) 7 T. Rouxel, F. Wakai, S. /. Am. Ceram. Soc, 11, 32373243(1994) S M. Herrmann, Ch. Schubert, A. Rendtel, and H. Hübner. "Silicon Nitride/Silicon Carbide Nanocomposites Materials": I. /. Am. Ceram. Soc, 81, 1094-1108 (1998) 9 H. Park, H. Kim, and K. Niihara, "Microstructure and High-temperature Strength of SÎ3N4 -SiC Nanocomposite,'V.

Figure 6 shows SEM image of melted sample BaLajTisOio crashed. It is observed cleavage surface. The compound of BaLa2Ti30io has been reported by Skapin et al. [15] in the system BaO-La203-TiC>2 (Figure 5). In order to explain the absent of LaTi03 and present of La2Ti2C>7, lattice energies of these compounds were calculated using MADEL as same as described above. aTi03 is -4391 kcal/mol (-2196 kcal/cation), La2Ti2Ü7 [17] lattice energy Uuarao? is -9928 kcal/mol (-2482 kcal/cation). It implies that La2Ti2Û7 more easy to form than LaTiG<3.

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